Transistor IGBT SMD N Channel 360v 30A RJP30H1 TO-252

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Detail Transistor IGBT SMD N Channel 360v 30A RJP30H1 TO-252

Harga 1 Pcs

SMD RJP30H1 360v 30A Silicon N-Channel PDP Trench IGBT RJP 30H1 TO-252

Spesifikasi :
* Collector Emitter Voltage => 360v
* Collector Current - Continuous (TC = 25C)=> 30A
* Collector Current - Pulsed => 200A
* Power Dissipation (TC 25C) => 40W
* Operating Temperature -55 ~ +150C

Gambar produk

Transistor IGBT SMD N Channel 360v 30A RJP30H1 TO-252
Transistor IGBT SMD N Channel 360v 30A RJP30H1 TO-252