Transistor D1047 D 1047 2SD1047 Transistor High Power NPN Bipolar Ampli

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Detail Transistor D1047 D 1047 2SD1047 Transistor High Power NPN Bipolar Ampli

Transistor D1047
transistor power ampli high power

Absolute maximum ratings(Ta=25)

SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 160 V
VCEO Collector-emitter voltage Open base 140 V
VEBO Emitter-base voltage Open collector 6 V
IC Collector current (DC) 12 A
ICM Collector current-peak 15 A
PC Collector power dissipation TC=25 100 W
Tj Junction temperature 150
Tstg Storage temperature -40~150

Gambar produk

Transistor D1047 D 1047 2SD1047 Transistor High Power NPN Bipolar Ampli
Transistor D1047 D 1047 2SD1047 Transistor High Power NPN Bipolar Ampli
Transistor D1047 D 1047 2SD1047 Transistor High Power NPN Bipolar Ampli
Transistor D1047 D 1047 2SD1047 Transistor High Power NPN Bipolar Ampli
Transistor D1047 D 1047 2SD1047 Transistor High Power NPN Bipolar Ampli
Transistor D1047 D 1047 2SD1047 Transistor High Power NPN Bipolar Ampli