Transistor Bipolar NPN D1047 D 1047 2SD1047 High Power Amplifier

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Detail Transistor Bipolar NPN D1047 D 1047 2SD1047 High Power Amplifier

Harga 1pcs

D1047

Description:
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Feature:
High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC

Gambar produk

Transistor Bipolar NPN D1047 D 1047 2SD1047 High Power Amplifier
Transistor Bipolar NPN D1047 D 1047 2SD1047 High Power Amplifier