Speed 512GB sequential read up to 3300MB/s read, sequential write up to 1300MB/s1 IOPS: up to 92/240K
NAND flash : 3D TLC Operating Temperature : 0° C to 70° C (32°F to 158°F) Storage Temperature : -40° C to 85° C (-40°F to 185°F) Shock Resistant : 1500G, duration 0.5ms, Half Sine Wave Vibration Resistant : 10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z) TBW : 256GB: 125TB DWPD : 0.44 MTBF : 1,500,000 Hours Dimension (L x W x H) : 80 mm x 22 mm x 2.25 mm / 3.15” x 0.87” x 0.09”