Sequential read of up to 1,700 MB/s Sequential write of up to 1,500 MB/s Faster boot-up and quicker application launch Better overall system performance Reliable storage Low power consumption, cool and quiet operation
Specification Usable Capacities 256GB/ 512GB NAND Components 3D NAND Interface PCIe Gen 3x4 NVMe 1.3 Form Factor M.2 2280 Package Dimensions (L×W×H) 123 x 85 x 4.3 mm Product Dimensions (L×W×H) 22 x 80 x 2 mm Weight 6.6g Max Sequential Read* Up to 1700MB/s Max Sequential Write* 256GB: up to 1100MB/s 512GB: up to 1500MB/s TBW 256GB: 380 ; 512GB: 800 PCIe Link Power Management APST, ASPM, L1.2 Operating Temperature 0°C to 70°C Storage Temperature -40°C to 85°C Certifications BSMI, CE, FCC, KCC, VCCI, REACH, RoHS MTBF 2 Million Hours Error Correction Code Less than 1 sector per ten quadrillion bits read Product Health Monitoring Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T) Full End-to-End Data path protection Supported Performance Optimization TRIM (requires OS support)
Gambar produk
PNY SSD NVME 500GB CS1031 PCIE Gen 3x4 M.2 2280PNY SSD NVME 500GB CS1031 PCIE Gen 3x4 M.2 2280PNY SSD NVME 500GB CS1031 PCIE Gen 3x4 M.2 2280