ORIGINAL IRF3205 IRF 3025 N Channel NPN 55V 110A IRF3205ZPBF IRF3205N

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Detail ORIGINAL IRF3205 IRF 3025 N Channel NPN 55V 110A IRF3205ZPBF IRF3205N

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Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features :
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated

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ORIGINAL IRF3205 IRF 3025 N Channel NPN 55V 110A IRF3205ZPBF IRF3205N
ORIGINAL IRF3205 IRF 3025 N Channel NPN 55V 110A IRF3205ZPBF IRF3205N