Detail MOSFET FDD8N50NZ FDD8N50N FDD8N50 FDD 8N50N 8N50NZ 8N50 TO-252
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Features
RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 3.25 A
Low Gate Charge (Typ. 14 nC)
Low Crss (Typ. 5 pF)
100% Avalanche Tested
Improved dv/dt Capability
ESD Imoroved Capability
RoHS Compliant
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