Collector-Emitter Breakdown Voltage (Vceo) 120V Power Dissipation (Pd) 625mW Collector Current (Ic) 100mA DC Current Gain (hFE@Ic,Vce) 120@2mA,6V Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@10mA,1mA Transistor Type NPN Operating Temperature +150℃@(Tj)