IRF3205 IRF3205PBF TO-220 55V 98A N Channel MOSFET BF03
Description: Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Feature: Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated.