IGBT HGTG11N120CND 11N120CND 43A 1200v

Detail IGBT HGTG11N120CND 11N120CND 43A 1200v

NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
43 A, 1200 V
HGTG11N120CND
The HGTG11N120CND is a Non− Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high voltage
switching IGBT family. IGBTs combine the best features
of MOSFETs and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on−state conduction loss
of a bipolar transistor. The IGBT used is the development type
TA49291. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power supplies
and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49303.
Features
• 43 A, 1200 V, TC = 25°
C
• 1200 V Switching SOA Capability
• Typical Fall Time: 340 ns at TJ = 150°
C
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
www.onsemi.com
• This is Pb−Free Device

Gambar produk