FQPF7N65C 7N65C 7N65 To-220F Mosfet 650V 7A

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Detail FQPF7N65C 7N65C 7N65 To-220F Mosfet 650V 7A

FQPF7N65C 7N65C 7N65 TO-220F N-Channel QFET 650V 7A BC33

Minimal Pemesanan 3pcs.

Description:
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC),and electronic lamp ballasts.

SPEK:
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) @ 25C:7A (Tc)
Vgs(th) (Max) @ Id:4V @ 250A
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1245pF @ 25V
Power Dissipation (Max):52W (Tc)
Rds On (Max) @ Id, Vgs:1.4 Ohm @ 3.5A, 10V

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FQPF7N65C 7N65C 7N65 To-220F Mosfet 650V 7A
FQPF7N65C 7N65C 7N65 To-220F Mosfet 650V 7A
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