Detail DDR3 4 GB NB SILICON POWER
DDR3 4 GB NB SILICON POWER
SPECIFICATIONS
Capacity : 4GB, 8GB
Chip Density : 512Mx8 8Chips / 512Mx8 16Chips
Frequency (Speed) : 1600MHz
Bandwidth : PC3L 12800
CAS Latency : 11
Voltage : 1.35V
Pins : 204-PIN
4GB : SP004GLSTU160N02
8GB : SP008GLSTU160N02
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