Mounting Style: Through Hole Package/Case: TO-92-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 300 V Collector- Base Voltage VCBO: 300 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Pd - Power Dissipation: 830 mW Gain Bandwidth Product fT: 60 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Packaging: Cut Tape Packaging: Reel DC Current Gain hFE Max: 50 at 25 mA, 20 V Height: 5.2 mm Length: 4.8 mm Technology: Si Width: 4.2 mm Brand: NXP Semiconductors DC Collector/Base Gain hFE Min: 50 Product Type: BJTs - Bipolar Transistors