BD139 BD-139 Medium Power NPN Transistor

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Detail BD139 BD-139 Medium Power NPN Transistor

Features

Plastic casing NPN Transistor

Continuous Collector current (IC) is 1.5A

Collector-Emitter voltage (VCE) is 80 V

Collector-Base voltage (VCB) is 80V

Emitter Base Breakdown Voltage (VBE) is 5V

DC current gain (hfe) is 40 to 160

Available in To-225 package

Gambar produk

BD139 BD-139 Medium Power NPN Transistor
BD139 BD-139 Medium Power NPN Transistor