Collector-Emitter Breakdown Voltage (Vceo) 120V Power Dissipation (Pd) 300mW Collector Current (Ic) 100mA DC Current Gain (hFE@Ic,Vce) 200@2mA,6V Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@10mA,1mA Transistor Type PNP Operating Temperature +150℃@(Tj)